The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Mar. 24, 1997
Applicant:
Inventors:
Shoichi Takamizawa, Nishishirakawa, JP;
Norihiro Kobayashi, Annaka, JP;
Assignee:
Shin-Etsu Handotai., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438459 ; 438977 ;
Abstract
A silicon wafer has an amorphous silicon layer formed on one main surface thereof. The amorphous silicon layer is formed by plasma chemical vapor deposition. The silicon wafer has a gettering layer that possesses high gettering capability and enhanced continuance of the gettering capability. Moreover, the stress acting on the silicon wafer due to the gettering layer is reduced so that the warpage of the silicon wafer decreases. The silicon wafer can be manufactured with high productivity.