The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Oct. 22, 1998
Sunil V Hattangady, McKinney, TX (US);
George R Misium, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention comprises an integrated circuit having both low voltage and high voltage MOS transistors and a method for making the integrated circuit. In accordance with the method of making the integrated circuit, a first oxide layer is formed outwardly from a semiconductor substrate comprising a low voltage region and a high voltage region. A sacrificial layer is formed outwardly from the first oxide layer. The part of the sacrificial layer disposed outwardly from the low voltage region is removed to form an intermediate structure. The intermediate structure is selectively etched to remove the part of the first oxide layer disposed outwardly from the low voltage region. A second oxide layer is then formed comprising a first area disposed outwardly from the low voltage region and second area disposed outwardly from the high voltage region. The formation of the second oxide layer in the second area consumes the sacrificial layer.