The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Feb. 26, 1997
Applicant:
Inventor:
Masanobu Zenke, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257308 ; 257311 ;
Abstract
Testing elements are disposed to prevent breakage by locating them such that their entire lower surface is formed directly on an insulating layer of a semiconductor device. These testing elements may be used with a fin type storage node electrode projecting from an inter-level insulating layer so as to use the top, side and back surfaces thereof for accumulation of electric charge. These testing elements may be used for evaluating properties of the layers of the storage node electrode and be concurrently formed directly on the inter-level insulating layer, thereby preventing the testing elements from undesirable breakage.