The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Nov. 21, 1997
Applicant:
Inventors:
Toshiaki Saishouji, Kanagawa, JP;
Kouzou Nakamura, Kanagawa, JP;
Toshimichi Kubota, Kanagawa, JP;
Junsuke Tomioka, Kanagawa, JP;
Assignee:
Komatsu Electronic Metals Co., Ltd., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 13 ; 117 15 ;
Abstract
When the pulling speed is V(mm/min), the temperature gradient along the crystal axis within the temperature range from the melting point of silicon to 1300.degree. C. is G1 (.degree. C./mm), the temperature gradient along the crystal axis within the temperature range from 1150.degree. to 1080.degree. C. is G2 (.degree. C./mm), and the octahedral-shaped void density is d (pieces/cm.sup.3), crystals are grown under a condition satisfying: