The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Dec. 23, 1996
Motorola, Inc., Schaumburg, IL (US);
Abstract
A semiconductor device (150) is formed having a first conductive member (64) overlying a field isolation region (36) that is typically less than two microns wide. Typically, the field isolation region (36) is relatively thinner compared to wider field isolation regions. The first conductive member (64) lies between the field isolation region (36) and a second conductive member (80) to shield the substrate (20). The shielding helps to increase the field threshold voltage of the field device. The invention is particularly useful in double polysilicon process flow used in forming devices operating at a potential higher than V.sub.DD. Examples of these devices include nonvolatile memories and microcontrollers having nonvolatile memory arrays.