Electroless copper plating solution and process for formation of copper

Abstract

Disclosed are an electroless copper plating solution comprising a copper ion, a copper ion-complexing agent, a reducing agent and a pH-adjusting agent, the plating solution comprising a trialkanolmonoamine or a salt thereof as a complexing agent and accelerator in an amount giving a higher copper deposition speed than the copper deposition speed obtained when the trialkanolmonoamine or salt thereof is present in an amount sufficient to complex the copper ion but not enough to function as the accelerator, and 1.2.times.10.sup.-4 to 1.2.times.10.sup.-3 mole/l of an iron ion compound as a reaction initiator and/or 1.92.times.10.sup.-4 to 1.92.times.10.sup.-3 mole/l of at least one compound selected from the group consisting of pyridazine, methylpiperidine, 1,2-di-(2-pyridyl)ethylene, 1,2-di-(pyridyl)ethylene, 2,2'-dipyridylamine, 2,2'-bipyridyl, 2,2'-bipyrimidine, 6,6'-dimethyl-2,2'-dipyridyl, di-2-pyridylketone, N,N,N',N'-tetraethylethylenediamine, napththalene, 1,8-naphthyridine, 1,6-naphthyridine, tetrathiafurvalene, .alpha.,.alpha.,.alpha.-terpyridine, phthalic acid, isophthalic acid and 2,2'-dibenzoic acid as an agent for improving the physical properties of a plating film, and a process for forming an electroless copper deposition film by using this electroless copper plating solution.