The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Jul. 10, 1997
Matthew C Gwinn, Salem, MA (US);
Eaton Corporation, Beverly, MA (US);
Abstract
The present invention provides for an ion implantation system that employs an ion source for ionizing and implanting into a substrate a noble diluent gas and a particular dopant gas. The noble diluent gas of the present invention preferably does not react with the dopant gas, or with dopant residue which coats the walls of the ionization chamber of the ion source, thus allowing the ion source to be used for accurate, stable low dose implants. Additionally, the noble diluent gas does not introduce conductivity altering ions, or impurities, into the substrate S. Consequently, the dosage of the dopant ions implanted into the substrate can be precisely controlled, especially in low dose applications.