The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Mar. 30, 1995
Hideo Tsuchiya, Kawasaki, JP;
Toru Tojo, Kanagawa-ken, JP;
Mitsuo Tabata, Yokohama, JP;
Toshiyuki Watanabe, Yokohama, JP;
Eiichi Kobayashi, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a method of inspecting a sample on which a pattern relating to fabrication of a semiconductor device is formed, there are provided a light radiation unit, an acquiring unit, a storage unit, a template, a calculation unit, a correction unit, a defect detection unit and an output unit. Pinhole shape data to be detected of the pattern is stored in the template. The calculation unit calculates the degree of coincidence between the pinhole shape data stored in the template and the measured image data stored in the storage unit in units of a predetermined amount of data. The correction unit corrects a portion of the measured image data corresponding to a value of the degree of coincidence exceeding a second predetermined value in units of the predetermined amount of data, when the degree of coincidence obtained by the calculation unit has exceeded a first predetermined value, thereby correcting the portion of the measured image data including the detected pinhole. The defect detection unit detects a defect in the pattern on the basis of the corrected measured image data portion including the pinhole, which is obtained by the correcting unit, and the measured image data.