The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 1999

Filed:

Jul. 28, 1997
Applicant:
Inventors:

Katsuhiro Tsuno, Tokyo, JP;

Tsuyoshi Tosho, Noboribetsu, JP;

Hideo Watanabe, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02L / ;
U.S. Cl.
CPC ...
257467 ; 136203 ; 257930 ;
Abstract

A thermoelectric semiconductor is formed of a sintered semiconductor layer nd metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and older layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.


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