The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Aug. 26, 1997
Chen-Chung Hsu, Taichung, TW;
Larry Lin, Hsinchu, TW;
Abstract
A high density transistor component and its manufacturing method which includes the steps of forming a pad oxide layer above a silicon substrate, forming a dielectric layer above the pad oxide layer, and growing an epitaxial silicon layer above the pad oxide layer covering the pad oxide layer as well as the dielectric layer. Source/drain regions including the heavily doped source/drain and the lightly doped source/drain are formed in the epitaxial silicon layer, and a gate terminal region composed from an assembly of a gate oxide layer, a gate terminal and two spacers is formed above the epitaxial silicon layer. The channel is located in the spatial location between the dielectric layer, the gate region and the source/drain regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile