The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Dec. 11, 1997
Applicant:
Inventors:
Khalid EzzEldin Ismail, White Plains, NY (US);
Stephen Anthony Rishton, Hayward, CA (US);
Katherine Lynn Saenger, Ossining, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257332 ; 257401 ; 257618 ; 438159 ; 438182 ; 438229 ; 438259 ;
Abstract
A field effect transistor and method for making the same is described wherein the field effect transistor incorporates a T-shaped gate and source and drain contacts self-aligned with preexisting shallow junction regions. The present invention provides a low resistance gate electrode and self-aligned low resistance source/drain contacts suitable for submicron FET devices, and scalable to smaller device dimensions.