The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Feb. 09, 1998
Applicant:
Inventors:
Kow-Ming Chang, Hsinchu, TW;
Shih-Wei Wang, Pingtung, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428426 ; 428432 ; 428469 ; 428472 ;
Abstract
A structure for reducing the stress between a HSQ dielectric layer and a metal layer. The structure comprises a metal layer, a stress buffer above the metal layer, and a spin-on-glass layer above the stress buffer. If the spin-on-glass layer is a dielectric material capable of producing tensile stress, the stress buffer layer is made from a material capable of generating compressive stress. On the contrary, if the spin-on-glass layer is a dielectric material capable of producing compressive stress, the stress buffer layer is made from a material capable of generating tensile stress.