The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Jun. 12, 1997
Applicant:
Inventor:
Monir El-Diwany, Saratoga, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438199 ; 438210 ; 438238 ; 438275 ;
Abstract
The low-voltage, e.g., 2.5-volt, transistors that support the logic operations of a CMOS device are formed to have a thin layer of gate oxide, while the high-voltage, e.g., 3.3 or 5-volt, transistors that support the analog operations of the device are formed to have a thick layer of gate oxide in a cost-effective process flow that requires only one additional masking step over a conventional double-poly CMOS process.