The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
May. 05, 1997
Applicant:
Inventor:
Tsun-Tsai Chang, Hsin-Chu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257744 ; 257382 ; 257368 ; 257588 ; 257408 ;
Abstract
A buried contact structure is provided for forming a contact between a source/drain region of a MOSFET and polysilicon conducting line. The polysilicon conducting line is formed on a field oxide region and extends onto the surface of the semiconductor substrate near the source/drain region. A polysilicon sidewall structure is formed in contact with the vertical edge of the polysilicon conducting line and the horizontal surface of the source/drain region to provide contact between the polysilicon conducting line and the source/drain region.
Chang, Tsun-Tsai. (1999). Buried contact structure (U.S. Patent No. 5952720). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5952720
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile