The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Dec. 05, 1997
Robert Louis Hodges, Phoenix, AZ (US);
STMicroelectronics, Inc., Carrollton, TX (US);
Abstract
A semiconductor structure comprises a silicon substrate of a first conductivity type including wells of a second conductivity type disposed on a surface thereof and a dielectric layer including silicon nitride disposed on the surface. The dielectric layer includes openings at least partially disposed on the p-wells. The dielectric layer also includes a top layer comprising silicon dioxide having a thickness of less than ten angstroms. Trenches having a depth comparable to or greater than a depth of the wells extend into the substrate surface within the openings. A nonconductive material is disposed within the trenches and has an upper surface that is substantially coplanar with the dielectric layer. Portions of the dielectric layer are used as gate dielectrics for transistors.