The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Oct. 16, 1997
Applicant:
Inventors:
Yasuo Kitou, Okazaki, JP;
Eiji Kitaoka, Anjo, JP;
Takamasa Suzuki, Nagoya, JP;
Mitsuhiro Kataoka, Kariya, JP;
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257622 ;
Abstract
A plurality of grooves are formed in a SiC substrate consisting of an n.sup.- -type epitaxial layer and a p-type epitaxial layer layered on the surface of an n.sup.+ -type monocrystalline SiC semiconductor substrate. These grooves are formed in a grid on the SiC substrate. Heat treatment is then carried out to straighten warp of the SiC substrate caused by the growth of the epitaxial layers.