The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Feb. 14, 1997
Moriya Miyashita, Yokkaichi, JP;
Masanobu Ogino, Yokosuka, JP;
Tadahide Hoshi, Kitakyushu, JP;
Masanori Numano, Yokohama, JP;
Shuichi Samata, Yokohama, JP;
Akiko Sekihara, Yokohama, JP;
Keiko Akita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A manufacturing method for manufacturing a semiconductor substrate has first annealing step for annealing silicon single crystal to permit oxygen embryos or oxygen precipitations grown from the oxygen embryos precipitating in a predetermined region and a second annealing step for permitting said oxygen embryos or said oxygen precipitations to contract using a second temperature range higher than the first temperature range, said second temperature range being high enough to contract said oxygen embryos and low enough to prevent redistribution of boron from affecting to device characteristics, to form a denuded zone in said predetermined region at the principal surface. An inspection method for inspecting a semiconductor substrate further has measuring step, subsequent to said first and second annealing steps for measuring the density of oxygen embryos grown into oxygen precipitations among those precipitated in said silicon single crystal.