The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Aug. 16, 1996
Applicant:
Inventors:
Kuang-Yeh Chang, Los Gatos, CA (US);
Yowjuang William Liu, San Jose, CA (US);
Mark I Gardner, Ceder Creek, TX (US);
Frederick N Hause, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438506 ; 438479 ; 438481 ; 438505 ; 438509 ; 438508 ;
Abstract
An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxide layer, which epitaxial regions will eventually become the active regions of devices.
Chang, Kuang-Yeh. (1999). Advanced isolation scheme for deep submicron technology (U.S. Patent No. 5950097). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5950097
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile