The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Jul. 07, 1997
Applicant:
Inventor:
Jemmy Wen, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257408 ; 257288 ; 257236 ; 257396 ; 257397 ; 257398 ; 257399 ; 257400 ; 257344 ; 438300 ; 438262 ; 438301 ; 438305 ; 438390 ;
Abstract
A MOS device and method of fabricating the same, wherein the source/drain region has polysilicon trench structure which are formed by self-alignment using silicon oxide layers as masks. The source/drain regions extend to the field oxide layer and/or above the gate. Therefore, contacts can be formed on source/drain conductive regions above the field oxide layer.