The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Apr. 21, 1997
Alexander D Lantsman, Middletown, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
An ionized physical vapor deposition apparatus is provided with an RF coil that surrounds the space between a target and a substrate holder and is energized with RF energy, preferably in the 0.1 to 60 MHz range, to form a secondary plasma in a volume of the space between the substrate holder and the main plasma that is adjacent the target. A dielectric material, such as a quartz window, either in the wall of the chamber or inside the chamber, or insulation on the coil, protects the coil from adverse interaction with plasma. Shields between the space and the dielectric material prevent sputtered particles from forming a coating on the dielectric material. The shields are partitioned to prevent eddy currents. The shields may be biased to control contamination and may be commonly or individually biased to optimize the uniformity of coating on the substrate and the directionality of the flux of ionized material at the substrate.