The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Jan. 16, 1998
Yasuhiro Kimura, Tokyo, JP;
Morihiko Kume, Tokyo, JP;
Tsuneaki Fujise, Saga, JP;
Masanori Gohara, Saga, JP;
Mitsubishi Denki Kabushiki, Tokyo, JP;
Sumitomo Sitix Corporation, Hyogo, JP;
Abstract
An object is to obtain a semiconductor wafer evaluation method and a semiconductor device manufacturing method having a reduced turn-around time and requiring no process apparatus and no dielectric breakdown characteristic evaluation device in evaluation of the dielectric breakdown characteristic of the oxide film. A sample wafer (1) is etched by using an SC-1 solution bath (2) to change process defects caused in the fabrication process including mirror polishing into pits. The number of pits is detected with a dust particle inspection system, and the dielectric breakdown characteristic of the sample wafer 1 can be evaluated by using the number of detected pits and previously obtained relations between the number of pits and the dielectric breakdown characteristic.