The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Jan. 08, 1997
Young-wook Park, Kyungki-do, KR;
Young-sun Kim, Kyunki-do, KR;
Seung-hee Nam, Seoul, KR;
Se-jin Shim, Kyungki-do, KR;
Cha-young Yoo, Suwon, KR;
Kwan-young Oh, Kyungki-do, KR;
Abstract
A capacitor for a semiconductor memory device and a method for manufacturing the same are provided. A lower electrode of a capacitor according to the present invention has a structure in which a first conductive layer and a second conductive layer are sequentially deposited and an HSG is selectively formed on the surface thereof. The first conductive layer is composed of an amorphous or a polycrystalline silicon film having a low concentration of impurities. The second conductive layer is composed of an amorphous silicon film having a high concentration of impurities. According to the present invention, it is possible to obtain a desirable Cmin/Cmax ratio in the lower electrode of the capacitor having an HSG silicon layer and to prevent diffusion of impurities from the lower electrode of the capacitor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile