The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 1999

Filed:

Aug. 21, 1997
Applicant:
Inventors:

Gi-won Cha, Suwon, KR;

Jei-hwan Yoo, Suwon, KR;

Hoon Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36523006 ; 36518909 ;
Abstract

A semiconductor memory device includes a sub-wordline and a bit line connected to a memory cell, a sub-wordline driver for signaling the sub-wordline, and a main word decoder and a sub-word decoder, for selecting the sub-wordline driver in response to an external input address signal, wherein the wordline driver includes an NMOS transistor switch connected between a main wordline which is an output of the main word decoder and the sub-wordline, and wherein the logic 'high' voltage level of a first control signal which controls the switch is lower than that of a signal output to the sub-wordline. The semiconductor memory device having the sub-wordline driver allows the internal power supply voltage to be used as the power supply voltage of the main word decoder. Accordingly, the reliability of a gate oxide film of a transistor constituting the main word decoder is improved, which lengthens the life of the semiconductor memory device.


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