The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Oct. 27, 1997
Tsung-Yuan Hung, Tainan, TW;
Yao-Pi Hsu, Chupei, TW;
United Semiconductor Corp., Taichung, TW;
Abstract
A method for forming electrostatic discharge protection devices that includes the steps of forming a transistor, which comprises a gate, a source region, a drain region, on a semiconductor substrate. Then, an insulating layer is formed over the transistor. Next, the insulating layer above the gate is removed, which represents one characteristic of this invention. Subsequently, a photolithographic processing operation is performed to form a photoresist layer over the substrate. The photoresist layer covers the insulating layer above the gate and the drain region while exposing the insulating layer above the source region. Thereafter, using the photoresist layer as a mask, the exposed insulating layer above the source region is removed. Next, the photoresist layer is removed. Finally, a self-aligned silicide processing operation is performed to form a silicide layer over the gate and the source region. Since no silicide layer is formed over the drain terminal, burnout of the drain terminal due to overheating can be avoided.