The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
May. 12, 1997
Ajay Jain, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for forming a copper interconnect (54) begins by depositing a barrier layer (48). An intermediate layer (50) is formed over the barrier layer (48) by exposing the barrier layer (48) to a plasma silane environment. The layer (50) is conductive when deposited so that contact resistance is not affected. The layer (50) is insitu covered with a copper seed layer (52). The layer (52) is not formed in an edge exclusion region (20) thereby exposing a portion (50a) of the layer (50). This portion (50a) will natively oxidize in a room ambient to form a copper electroplating prevention barrier whereby copper will not electroplate in the region (20). Therefore, the region (50a) prevents barrier-to-copper interfaces to avoid delamination of the copper while preserving the edge exclusion region desired for copper electroplating.