The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Dec. 13, 1996
Applicant:
Inventors:
John T Yue, Los Altos, CA (US);
Matthew S Buynoski, Palo Alto, CA (US);
Yowjuang W Liu, San Jose, CA (US);
Peng Fang, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257330 ; 257331 ; 257334 ;
Abstract
A field effect transistor is formed across one or more trenches (26) or bars (120), thereby increasing the effective width of the channel region and the current-carrying capacity of the device.
Yue, John. (1999). Bar field effect transistor (U.S. Patent No. 5932911). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5932911
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile