The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Oct. 17, 1997
Chisato Furukawa, Tokyo, JP;
Masayuki Ishikawa, Tokyo, JP;
Hideto Sugawara, Tokyo, JP;
Kenji Isomoto, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A substrate for forming a compound semiconductor device is placed in a reaction chamber. An MOCVD method or a GS-MBE method is used to grow compound semiconductor layers on the substrate. The grown layers include, for example, a GaN buffer layer, an n-GaN layer, an InGaN active layer, a p-AlGaN layer, and a p.sup.+ -GaN contact layer. After the growth of the layers, the substrate is kept in the reaction chamber, and a passivation film of, for example, SiNx, SiO2, or SiON is formed on top of the grown layers according to a CVD or GS-MBE method. Since the top of the grown layers is not exposed to air outside the reaction chamber, no oxidization or contamination occurs on the top of the grown layers. The compound semiconductor device is manufactured through simpler processes compared with a prior art that needs separate apparatuses for growing and forming the layers and passivation film.