The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Apr. 24, 1998
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A method for creating a stacked, or crown shaped, capacitor structure, with increased surface area, obtained using a storage node electrode, comprised of HSG silicon grains on the surface of the storage node electrode, has been developed. An in situ procedure, allows HSG silicon seeds to be selectively formed, only on the exposed surfaces of a amorphous silicon storage node electrode shape, in an LPCVD system, directly after an HF preclean step. A subsequent anneal, again performed in situ, in the LPCVD system, results in the formation of HSG silicon grains, converted from the HSG silicon seeds.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile