The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Oct. 29, 1997
Applicant:
Inventor:
Tadamoto Tamai, Tokyo, JP;
Assignee:
Ebara Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01J / ;
U.S. Cl.
CPC ...
25049221 ; 25044211 ;
Abstract
A serial wafer processing type ion implantation system and method suitable for small production of many product types. The ion implantation method implants ions while a first wafer group including at least one or more wafers is rotated along a first orbital path intersecting with a path of an ion beam and while a second wafer group including at least one or more wafers is rotated along a second orbital path intersecting with the path of the ion beam, at least a portion of the second orbital path being different from the first orbital path.