The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Aug. 11, 1997
Hideyuki Shoji, Tokyo, JP;
Takakazu Kusuki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for dry-etching a silicon substrate by the use of a mask selectively formed on the silicon substrate, in which method a reaction product of dry etching is deposited, during dry etching, in a uniform thickness on the side wall of each groove formed in the silicon substrate by dry etching. In the inventive method, etching is conducted by using, as an etching gas, a mixed gas containing Cl.sub.2, HBr, O.sub.2 and He or a mixed gas contained Cl.sub.2, HBr and CO, under the conditions of an etching pressure of 0.02-0.05 Torr, a RF power density of 1.01-1.64 W/cm.sup.2 and a substrate temperature of 40-50.degree. C. With this method, the tapered sectional shape of each groove formed in the silicon substrate can be controlled easily and etching can be conducted at high reproducibility.