The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Dec. 22, 1997
Pei-Yang Yan, Saratoga, CA (US);
Guojing Zhang, Sunnyvale, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A novel mask for photolithography in semiconductor processing and the mask fabrication method is disclosed. The mask includes a substrate, a patterned buffer layer, a patterned absorber layer above the patterned buffer layer, and a protective cap. The substrate preferably contains a multilayer resonant reflective surface. The buffer layer and protective cap are transmissive to the wavelength of light used in the photolithography. The absorber layer is absorptive to the wavelength of light used in the photolithography. The mask is fabricated by first depositing the buffer layer. The absorber layer is formed on the buffer layer. Both absorber layer and buffer layer are etched to create a pattern. A protective cap layer is then deposited on the patterned absorber layer and buffer layer, and the protective cap is planarized as needed to create a substantially smooth mask surface.