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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5926412 B1

PDFFull Text
Date of Patent:
Jul. 20, 1999

Filed:

Apr. 02, 1992

Ferroelectric memory structure

Applicant:
Inventors:

Joseph T Evans, Jr, Albuquerque, NM (US);

Jeff A Bullington, Albuquerque, NM (US);

Stephen E Bernacki, Northboro, MA (US);

Bruce G Armstrong, Belmont, CA (US);

Assignee:

Raytheon Company, Lexington, MA (US);

Attorneys:

Lenzen, Jr.; Glenn H.

Powell; John W.

Primary Examiner:

Jack A Lane

Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365177 ; 3652256 ;
Abstract

Architectures for a ferroelectric memory which avoids the half select phenomenon and the problems associated with destructive readout. Non-destructive readout is provided by measuring current through the ferroelectric memory as a measure of its resistance. Information is stored in the ferroelectric memory element by altering its resistance through a polarizing voltage. The half select phenomenon is avoided by using isolation techniques. In various embodiments, zener diodes or bipolar junction transistors are used for isolation.

Find Patent Forward Citations

Evans, Jr, Joseph. (1999). Ferroelectric memory structure (U.S. Patent No. 5926412). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5926412

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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