The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
Apr. 02, 1992
Applicant:
Inventors:
Joseph T Evans, Jr, Albuquerque, NM (US);
Jeff A Bullington, Albuquerque, NM (US);
Stephen E Bernacki, Northboro, MA (US);
Bruce G Armstrong, Belmont, CA (US);
Assignee:
Raytheon Company, Lexington, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365177 ; 3652256 ;
Abstract
Architectures for a ferroelectric memory which avoids the half select phenomenon and the problems associated with destructive readout. Non-destructive readout is provided by measuring current through the ferroelectric memory as a measure of its resistance. Information is stored in the ferroelectric memory element by altering its resistance through a polarizing voltage. The half select phenomenon is avoided by using isolation techniques. In various embodiments, zener diodes or bipolar junction transistors are used for isolation.