The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
May. 08, 1996
Hiroaki Tsutsui, Tokyo, JP;
Takao Matsumura, Tokyo, JP;
Hirokazu Oikawa, Tokyo, JP;
Masayuki Yokoi, Tokyo, JP;
Junichi Nakamura, Tokyo, JP;
Hiroyuki Sato, Tokyo, JP;
Jun Mizoe, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Disclosed is a method selective of vapor phase etching for fabricating a semiconductor device having a refractory metal silicide electrode abutting a silicon oxide film on the surface or a semiconductor device having an AlGaAs layer, an electrode formed on the AlGaAs layer and a silicon oxide film on the surface of the semiconductor device. The method comprises a step of removing a portion of the silicon oxide film by a gas including a vapor of hydrogen fluoride. The method further uses a mixture of nitrogen gas including vapor of anhydrous hydrofluoric acid and a nitrogen gas including a vapor of H.sub.2 O, wherein the ratio of the nitrogen gas including the vaporized anhydrous hydrofluoric acid to the nitrogen gas including vapor of H.sub.2 O is less than 1.