The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1999
Filed:
Mar. 19, 1998
Chuen-Huei Yang, Taipei, TW;
Chang-Ming Dai, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of forming and exposing a layer of resist which will minimize or eliminate side lobe effect resulting from the use of phase shifting masks or attenuating phase shifting masks in the exposed and developed layer of resist. The curve of reflectivity as a function of resist thickness, or swing curve, is calculated using the index of refraction, n, and the extinction coefficient, k, of the resist material and plotted. An optimum thickness of the resist corresponding to a relative maximum of the swing curve is chosen. The angular velocity used to spin the resist onto wafers is selected to produce the optimum thickness. Wafers having a resist layer with the optimum thickness are then prepared, exposed, and developed. The layer of resist may have a layer of anti-reflective material on the top surface of the layer of resist if desired.