The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1999
Filed:
Mar. 11, 1997
Robert Jeffrey Bailey, Santa Cruz, CA (US);
Patrick J Brady, Livermore, CA (US);
WJ Semiconductor Equipment Group, Inc., Scotts Valley, CA (US);
Abstract
A method of reducing metal contamination during semiconductor processing in a reactor having metal components is provided. The method includes forming an aluminum oxide layer on the surface of certain of the metal components before processing of substrates. The aluminum oxide layer substantially prevents the formation of volatile metal atoms from the metal components. The aluminum oxide layer is formed by heating the metal component first in a dry N.sub.2 atmosphere to a first temperature, and then in a dry H.sub.2 atmosphere to a second temperature. The component is then soaked at the second temperature in a wet H.sub.2 atmosphere to form the aluminum oxide layer, and is followed by soaking at the second temperature in a dry H.sub.2 atmosphere to reduce any other metal oxides that may have formed. The component is then cooled first in a dry H.sub.2 atmosphere, and then in a dry N.sub.2 atmosphere where a layer of substantially pure aluminum oxide is provided on the surface of the metal component.