The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1999
Filed:
Dec. 23, 1996
Gregory A Roche, Sunnyvale, CA (US);
David T Hodul, Oakland, CA (US);
Vahid Vahedi, Albany, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A graded gap fill process in which, in a high density plasma processing chamber, an insulating layer is deposited on a substrate without causing plasma charge-related damage to the substrate. The insulating layer is disposed above a first layer having trenches formed therein and below a subsequently deposited second layer. A protection layer is first deposited above the first layer using a first set of deposition parameters. This protection layer coats a surface of the first layer in a substantially conformal manner without forming voids in the trenches. A fill layer is then deposited above the protection layer using a second set of deposition parameters. The first set of deposition parameters is selected to reduce plasma charge-related damage relative to the second set of deposition parameters. The combination of the protection layer and the fill layer sufficiently electrically isolates the first layer from the second layer.