Integrated circuit structure incorporating a metal oxide semiconductor

Abstract

A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) exhibiting enhanced immunity to Hot Carrier Effects (HCEs), and a method by which the MOSFET may be formed. To form the MOSFET there is first provided a semiconductor substrate having a gate dielectric layer formed thereupon. The gate dielectric layer has a gate electrode formed thereupon, where the gate dielectric layer extends beyond a pair of opposite edges of the gate electrode. Formed into the semiconductor substrate adjoining the pair of opposite edges of the gate electrode is a pair of low dose ion implants. Formed upon the gate dielectric layer and contacting the pair of opposite edges of the gate electrode is a pair of conductive spacers. The pair of conductive spacers partially overlaps the pair of low dose ion implants. Finally, there is formed into the semiconductor substrate adjoining the pair of opposite edges of the gate electrode and further removed from the pair of conductive spacers a pair of source/drain electrodes. The pair of source/drain electrodes partially overlaps the pair of low dose ion implants. Optionally, a pair of insulator spacers may be formed upon the pair of conductive spacers to adjust the partial overlap of the pair of source/drain electrodes and the pair of low dose ion implants.