The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
Feb. 18, 1997
Applicant:
Inventors:
Stephen A Stockman, San Jose, CA (US);
Daniel A Steigerwald, Cupertino, CA (US);
Changhua Chen, San Jose, CA (US);
Assignee:
Hewlett-Packard Company, Palo alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257610 ; 257611 ; 257612 ; 257 96 ; 257102 ;
Abstract
A method for improving the operating stability of compound semiconductor minority carrier devices and the devices created using this method are described. The method describes intentional introduction of impurities into the layers adjacent to the active region, which impurities act as a barrier to the degradation process, particularly undesired defect formation and propagation. A preferred embodiment of the present invention uses O doping of III-V optoelectronic devices during an epitaxial growth process to improve the operating reliability of the devices.