The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1999
Filed:
Mar. 24, 1997
Timothy J Maloney, Palo Alto, CA (US);
Travis M Eiles, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Electrostatic discharge protection circuits adapted for use in low voltage CMOS processes have at least one PFET in the primary charge conduction path, and timer circuits configured to enable the primary conduction path during ESD events and to disable the primary conduction path during steady state conditions. In a further aspect of the present invention, bias circuits for maintaining steady state gate voltages below the dielectric breakdown level are included. In a still further aspect of the present invention a bridge circuit couples a first power supply node to a second power supply node, where the second power supply node is coupled to an ESD protection circuit.