The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1999
Filed:
Apr. 17, 1998
Applicant:
Inventors:
Hao-Chieh Liu, Taipei, TW;
Erik S Jeng, Hsinchu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438689 ; 438734 ; 438712 ; 216 70 ; 216 76 ;
Abstract
A method for etching dielectric layers is disclosed. A first etch of the dielectric layers is performed with a gas chemistry comprising C.sub.4 F.sub.8 flowing at about 10 sccm to about 25 sccm and CH.sub.3 F flowing at about 5 sccm to about 20 sccm. A second etch of the dielectric layers is performed with the gas chemistry and flow rates of gases which are about 10% to about 40% greater than the flow rates of gases in the first etch.