The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 1999

Filed:

Jun. 28, 1996
Applicant:
Inventors:

Roger Patrick, Mountain View, CA (US);

Phillip L Jones, Fremont, CA (US);

Kambiz Fallahpour, Fremont, CA (US);

Yun-Yen Yang, San Jose, CA (US);

Wen-Ben Chou, Palo Alto, CA (US);

Assignee:

Lam Research Corp., Freemont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438731 ; 438729 ; 438730 ; 216 67 ; 216 68 ; 156345 ;
Abstract

An apparatus and method in a plasma processing chamber for reducing charging of a wafer is described. A plasma generating element is configured to cause a plasma including ions and free radicals to be formed in a plasma generating region. A plasma diffusion region is configured so that plasma generated in the plasma generating region can diffuse through the plasma diffusion region. A conductive grid is positioned within the plasma diffusion region between the wafer and the plasma generating region. The conductive grid includes a mesh which is configured to trap a portion of the ions so that a portion of the ions are prevented from diffusing through the diffusion region to reach the wafer.


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