The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Nov. 18, 1996
Shye Lin Wu, Hsinchu, TW;
Powerchip Semiconductor Corp., Taiwan R.O.C., TW;
Abstract
A method of manufacturing crown shape capacitors for use in semiconductor memories. High etching selectivity between BPSG (borophososilicate glass) and CVD-oxide (chemical vapor deposition oxide) is used to fabricate horizontal fins and a vertical pillar within a crown shaped capacitor. Utilizing the structure as a mold, the present invention can improve the performance of a capacitor by increasing the surface area of the capacitor. First, a composition layer consists of BPSG and silicon oxide formed on a substrate. A highly selective etching is used to etch the BPSG sublayers of the composition layer. Then, a contact hole is formed in the composition layer. Next, a first conductive layer is formed in the contact hole and a conductive spacers are formed on the side wall of the composition layer. Then, the composition layer is removed by BOE solution. Next, a dielectric film and a second conductive layer are respectively formed on the first conductive layer. Thus, a crown shape capacitor with a plurality of horizontal fins and a vertical pillar structure is formed.