The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Oct. 03, 1997
Leonard Cecil Feldman, Nashville, TN (US);
Martin Laurence Green, Summit, NJ (US);
Thomas Werner Sorsch, Edison, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
A process for forming a silicon oxynitride layer in an N.sub.2 atmosphere is disclosed. The silicon oxynitride layer is formed by heating a silicon substrate in an N.sub.2 atmosphere for a period of time that is sufficient to form a nitrided layer with a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 therein. Afterward, the substrate is further oxidized in an oxygen containing atmosphere for a period of time sufficient to form a silicon oxynitride layer on the substrate with a thickness of at least about 1 nm and a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 on the wafer.