Method for removing fluorinated photoresist layers from semiconductor

Abstract

A method for removing from a patterned silicon containing dielectric layer a patterned partially fluorinated photoresist layer employed in patterning the patterned silicon containing dielectric layer. There is first formed over a semiconductor substrate a metal contact layer having a silicon containing dielectric layer formed thereover. There is then formed upon the silicon containing dielectric layer a patterned photoresist layer. There is then formed by use of a reactive ion etch (RIE) plasma etch method employing a fluorine containing etchant a via through the silicon containing dielectric layer to form a patterned silicon containing dielectric layer reaching the metal contact layer. The reactive ion etch (RIE) plasma etch method simultaneously forms from the patterned photoresist layer a partially fluorinated patterned photoresist layer comprising a patterned fluorinated surface layer of the partially fluorinated patterned photoresist layer and a patterned non-fluorinated underlying remainder layer of the partially fluorinated patterned photoresist layer. The reactive ion etch (RIE) plasma etch method also simultaneously forms upon the sidewalls of the via a metal-polymer residue layer. There is then removed, at least partially, the patterned fluorinated surface layer of the partially fluorinated patterned photoresist layer through a first stripping method employing an argon containing plasma under conditions such that the metal-polymer residue layer is not substantially oxidized. Finally, there is then removed through a second stripping method at least the metal-polymer residue layer from the sidewalls of the via.