Methods for forming integrated circuit capacitor electrodes including

Abstract

A method for forming an electrode for an integrated circuit device includes the steps of forming a first insulating layer on a semiconductor substrate and forming a conductive mesa on the first insulating layer. The insulating layer has a contact hole therein exposing a portion of the substrate, and the conductive mesa covers and extends into the contact hole so that the conductive mesa is electrically connected to the substrate. A second insulating layer is formed on the first insulating layer wherein the second insulating layer surrounds the conductive mesa and wherein the second insulating layer has a second thickness greater than the first thickness. Accordingly, sidewalls of the second insulating layer are exposed adjacent the conductive mesa. Spacers are formed on the conductive mesa along the sidewalls of the second insulating layer, and the conductive mesa is etched using the second insulating layer and the spacers as an etching mask.