The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 1999

Filed:

Nov. 04, 1996
Applicant:
Inventors:

Ferruccio Frisina, Sant'Agata Li Battiati, IT;

Giuseppe Ferla, Catania, IT;

Salvatore Rinaudo, S. Marco D'Alunzio, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257341 ; 257328 ; 257139 ; 257342 ; 257345 ; 257378 ; 257401 ; 438 37 ; 438156 ; 438185 ; 438209 ; 438217 ;
Abstract

A MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type having a first resistivity value. Under each body region a respective lightly doped region of the second conductivity type is provided having a second resistivity value higher than the first resistivity value.


Find Patent Forward Citations

Frisina, Ferruccio. (1999). Mos technology power device with low output resistance and low (U.S. Patent No. 5900662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5900662

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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