The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Oct. 03, 1996
Applicant:
Inventors:
Spyridon Gisdakis, Munich, DE;
Michaela Zellner, Taufkirchen, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438528 ;
Abstract
Method for the implantation of dopant into semiconductor material, whereby a reaction gas, for example fluorine, is conducted from a gas bottle via valves and mass flow regulator into a recipient into which dopant or a chemical compound of dopant has been introduced in solid form, so that the reaction gas reacts with the dopant to form a gaseous chemical compound, and this gas is subsequently forwarded into an apparatus for the implantation. A plurality of gas bottles for employing various reaction gasses and a plurality of recipients can be employed for an implantation of different dopants in alternation.