The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Jun. 10, 1997
Applicant:
Inventors:
Nobuhiro Tanaka, Kanagawa, JP;
Takeshi Fukunaga, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438149 ; 438151 ; 438928 ;
Abstract
In manufacturing a semiconductor device on a glass substrate, a conductive thin-film (for instance, a conductivity-imparted silicon film) is formed on the bottom surface side of the glass substrate at the initial stage of a manufacturing process. Since the conductive thin film serves as an electrostatic shield, the glass substrate is prevented from being electrified directly, whereby electrostatic breakdown of device elements as would otherwise be caused by electrification of the glass substrate can be avoided.