The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
May. 22, 1997
Applicant:
Inventors:
Eugene Chen, Gilbert, AZ (US);
Jing Shi, Chandler, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365158 ; 365171 ; 365173 ;
Abstract
First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a first layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. A layer of oxide (e.g. NiO) is positioned on either one or both major surfaces of the magnetic memory cell. The oxide has a thickness (e.g. less than approximately 150 .ANG.) which prevents the layer of oxide from pinning the first and second layers of magnetic material and adapts the layer of oxide to the first and second layers of magnetic material so as to increase the GMR ratio of the magnetic memory cell.