The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Dec. 31, 1996
Jeffrey K Greason, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method and apparatus to increase the size of the design window for write margin and read stability margin of memory cells without requiring a voltage above the power supply voltage or below ground. An SRAM consisting of an SRAM cell having a ground reference and a circuit coupled to receive a first signal and coupled to drive the ground reference. The circuit is configured to drive the ground reference to a first voltage if the first signal is in a first state. The circuit is configured such that the first node is at a second voltage if the first signal in a second state, the first signal being in the first state indicating a write operation, the first signal being in the second state indicating a non-write operation, the first voltage being greater than the second voltage.